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dmc4050ssd document number: ds33310 rev. 2 - 2 1 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated 40v complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = 25 c (notes 3 & 5) q1 40v 45m @ v gs = 10v 5.5a 60m @ v gs = 4.5v 4.2a q2 -40v 45m @ v gs = -10v -5.8a 60m @ v gs = -4.5v -4.2a description and applications this mosfet has been designed to ensure that r ds(on) of n and p channel fet are matched to minimize losses in both arms of the bridge. the dmc4040ssd is optimiz ed for use in 3 phases brushless dc motor circuits (bldc), ccfl backlighting. ? 3 phases bldc motor ? ccfl backlighting features and benefits ? matched n & p r ds(on) - minimizes power losses ? fast switching ? minimizes switching losses ? dual device ? reduces pcb area ? "green" component and rohs compliant (note 1) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 1) product marking reel size (inches) tape width (mm) quantity per reel DMC4050SSD-13 c4050sd 13 12 2,500 notes: 1. diodes, inc. defines ?green? products as those whic h are rohs compliant and contain no halogens or antimony compounds ; further information about diodes inc.?s ?green? policy can be found on our website. for packaging deta ils, go to our website. marking information so-8 top view top view equivalent circuit d1 s1 g1 s2 g2 d1 d2 d2 d 1 s1 g1 d2 s2 g2 c4050sd yy ww = manufacturer?s marking c4050sd = product type marking code yyww = date code marking yy = year (ex: 10 = 2010) ww = week (01 - 53)
dmc4050ssd document number: ds33310 rev. 2 - 2 2 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated maximum ratings @t a = 25c unless otherwise specified characteristic symbol n-channel - q1 p-channel - q2 units drain-source voltage v dss 40 -40 v gate-source voltage v gss 20 20 continuous drain current v gs = 10v (notes 3 & 5) i d 5.8 -5.8 a t a = 70c (notes 3 & 5) 4.38 -4.52 (notes 2 & 5) 4.2 -4.2 (notes 2 & 6) 5.3 -5.3 pulsed drain current v gs = 10v (notes 4 & 5) i dm 24.1 -24.9 continuous source current (body diode) (notes 3 & 5) i s 2.5 -2.5 pulsed source current (body diode) (notes 4 & 5) i sm 24.1 -24.9 thermal characteristics @t a = 25c unless otherwise specified characteristic symbol n-channel - q1 p-channel - q2 unit power dissipation linear derating factor (notes 2 & 5) p d 1.25 10 w mw/ c (notes 2 & 6) 1.8 14.3 (notes 3 & 5) 2.14 17.2 thermal resistance, junction to ambient (notes 2 & 5) r ja 100 c/w (notes 2 & 6) 70 (notes 3 & 5) 58 thermal resistance, junction to lead (notes 5 & 7) r jl 51 operating and storage temperature range t j, t stg -55 to +150 c notes: 2. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 3. same as note (2), except the device is measured at t 10 sec. 4. same as note (2), except the device is pulsed with d = 0.02 and pulse width 300s. 5. for a dual device with one active die. 6. for a device with two active die running at equal power. 7. thermal resistance from junction to so lder-point (at the end of the drain lead).
dmc4050ssd document number: ds33310 rev. 2 - 2 3 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated thermal characteristics 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 r(theta junction-to-ambient), r ja one active die 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse t amb = 25c one active die dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb = 25c one active die pulse power dissipation maximum power (w) pulse width (s) single pulse t amb = 25c one active die 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
dmc4050ssd document number: ds33310 rev. 2 - 2 4 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated electrical charact eristics n-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 40 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 a v ds = 40v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) 0.8 1.3 1.8 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 20 33 45 60 m v gs = 10v, i d = 3a v gs = 4.5v, i d = 3a forward transfer admittance |y fs | - 12.6 - s v ds = 5v, i d = 3a diode forward voltage (note 8) v sd - 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9) input capacitance c iss - 1790.8 - pf v ds = 20v, v gs = 0v, f = 1.0mhz output capacitance c oss - 160.6 - pf reverse transfer capacitance c rss - 120.5 - pf gate resistance r g - 1.03 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 37.56 - nc v gs = 10v, v ds = 20v, i d = 3a gate-source charge q g s - 7.8 - nc gate-drain charge q g d - 6.6 - nc turn-on delay time t d ( on ) - 8.08 - ns v gs = 10v, v ds = 20v, i d = 3a turn-on rise time t r - 15.14 - ns turn-off delay time t d ( off ) - 24.29 - ns turn-off fall time t f - 5.27 - ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to production testing. 0 5 10 15 20 25 30 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 3.5v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 8.0v gs 0 5 10 15 20 25 30 01 2345 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds
dmc4050ssd document number: ds33310 rev. 2 - 2 5 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 10v gs 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.01 0.02 0.03 0.04 0.05 0.06 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a
dmc4050ssd document number: ds33310 rev. 2 - 2 6 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 35 40 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 10,000 i , leaka g e c u r r en t (na) dss 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 20v i = 12a ds d 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 94c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmc4050ssd document number: ds33310 rev. 2 - 2 7 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated electrical charact eristics p-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -40 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1.0 a v ds = -40v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) -0.8 -1.3 -1.8 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 28 30 45 60 m v gs = -10v, i d = -3a v gs = -4.5v, i d = -3a forward transfer admittance |y fs | - 16.6 - s v ds = -5v, i d = -3a diode forward voltage (note 8) v sd - -0.7 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 9) input capacitance c iss - 1643.17 - pf v ds = -20v, v gs = 0v, f = 1.0mhz output capacitance c oss - 179.13 - pf reverse transfer capacitance c rss - 127.82 - pf gate resistance r g - 6.43 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 33.66 - nc v gs = -10v, v ds = -20v, i d = -3a gate-source charge q g s - 5.54 - nc gate-drain charge q g d - 7.30 - nc turn-on delay time t d ( on ) - 6.85 - ns v gs = -10v, v ds = -20v, i d = -3a turn-on rise time t r - 14.72 - ns turn-off delay time t d ( off ) - 53.65 - ns turn-off fall time t f - 30.86 - ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to production testing. 0 0.5 1 1.5 2 fig. 13 typical output characteristic -v , drain-source voltage (v) ds 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d 01 2 345 fig. 14 typical transfer characteristic -v , gate-source voltage (v) gs 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds
dmc4050ssd document number: ds33310 rev. 2 - 2 8 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated 0 5 10 15 20 25 30 fig. 15 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d 0 0.01 0.02 0.03 0.04 0.05 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = -4.5v gs v = -10v gs 0 5 10 15 20 25 30 -i , drain current (a) d fig. 16 typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.03 0.04 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -10v gs fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1. 7 r , d r ai n -s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d fig. 18 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.01 0.02 0.03 0.04 0.05 0.06 r , d r ain-s o u r c e o n- r esis t an c e ( ) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d 0 0.5 1.0 1.5 2.0 fig. 19 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a -v , gate threshold voltage (v) gs(th) i = -250a d i = -1ma d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 20 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 12 14 16 18 20 -i , s o u r c e c u r r en t (a) s t = 25c a
dmc4050ssd document number: ds33310 rev. 2 - 2 9 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated 0 5 10 15 20 25 30 fig. 21 typical total capacitance -v , drain-source voltage (v) ds 10 100 1,000 10,000 c , c a p a c i t a n c e (p f ) c iss c rss c oss 0 5 10 15 20 25 30 35 40 fig. 22 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 10,000 -i , leaka g e c u r r e n t (na) dss 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 23 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs v = -20v i = -12a ds d 0.001 0.01 0.1 1 10 100 1,000 fig. 24 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r(t), t r a n sie n t t h e r mal r esis t a n c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 94c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmc4050ssd document number: ds33310 rev. 2 - 2 10 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated package outline dimensions suggested pad layout so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
dmc4050ssd document number: ds33310 rev. 2 - 2 11 of 11 www.diodes.com march 2011 ? diodes incorporated dmc4050ssd a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com

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